Electrochemically etched tunnels in gallium arsenide
Journal Article
·
· J. Electrochem. Soc.; (United States)
Combined transmission and reflection infrared microscopy and of scanning electron microscopy anodically etched (111) A surfaces showed extensive tunnel etch-pits and surface details in n-GaAs. Tunnel pits from anodic dissolution in flowing 10 percent aq. KOH occur in the dark or in the light at high anodic potentials when the current exceeds the saturation-value. Tunnel pits occur in dislocation-free material and may result from surface states created by preferential adsorption on (111)B faces. (WDM)
- Research Organization:
- Post Office Research Dept., London
- OSTI ID:
- 7284726
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 122:11; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Orthodox etching of HVPE-grown GaN
Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates
Journal Article
·
Sat Sep 15 00:00:00 EDT 2018
· Semiconductors
·
OSTI ID:22749802
Orthodox etching of HVPE-grown GaN
Journal Article
·
Thu Aug 10 00:00:00 EDT 2006
· Journal of Crystal Growth
·
OSTI ID:918671
Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates
Journal Article
·
Sun Dec 31 23:00:00 EST 1995
· Journal of the Electrochemical Society
·
OSTI ID:201383