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Title: Jet vapor deposition of thin films for solid oxide and other fuel cell applications

Conference ·
OSTI ID:7280732

JVD has demonstrated promise for thin film SOFC research and fabrication. Micron scale YSZ films made via JVD are dense and pinhole free; they seal highly porous electrode surfaces and are gas tight. There is little chance for impurity incorporation in JVD, and the evidence points to oxygen ion conductivity.

Research Organization:
Jet Process Corp., New Haven, CT (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
FG05-91ER81156
OSTI ID:
7280732
Report Number(s):
DOE/ER/81156-92/C0059; CONF-920748-6; ON: DE92019980
Resource Relation:
Conference: US Department of Energy contractors review meeting on fuel cells, Morgantown, WV (United States), 14-15 Jul 1992
Country of Publication:
United States
Language:
English