Jet vapor deposition of thin films for solid oxide and other fuel cell applications
Conference
·
OSTI ID:10173979
JVD has demonstrated promise for thin film SOFC research and fabrication. Micron scale YSZ films made via JVD are dense and pinhole free; they seal highly porous electrode surfaces and are gas tight. There is little chance for impurity incorporation in JVD, and the evidence points to oxygen ion conductivity.
- Research Organization:
- Jet Process Corp., New Haven, CT (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG05-91ER81156
- OSTI ID:
- 10173979
- Report Number(s):
- DOE/ER/81156-92/C0059; CONF-920748-6; ON: DE92019980
- Resource Relation:
- Conference: 4. annual fuel cells contractors review meeting,Morgantown, WV (United States),14-15 Jul 1992; Other Information: PBD: [1992]
- Country of Publication:
- United States
- Language:
- English
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