Kinetics of hydrogen interaction with SiO[sub 2]-Si interface trap centers

Journal Article · Mon Jul 18 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112361· OSTI ID:7276883

Khatri, R ^[1]; Asoka-Kumar, P; Nielsen, B ^[2]; Roellig, L O ^[1]; Lynn, K G ^[2]

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1. Department of Physics, City College of CUNY, New York 10031 (United States)
2. Brookhaven National Laboratory, Upton, New York 11973 (United States)

The effects of low temperature ([le]700 [degree]C ) annealing on the thermal dissociation of hydrogen-passivated interface trap centers of a SiO[sub 2]-Si(100) system is studied using positron annihilation spectroscopy. The Si---H bonds dissociate with an activation energy of 2.60[plus minus]0.06 eV. Assuming that the anneal generates trap centers with a single charge, positron measurements indicate that [similar to]4.5[times]10[sup 8] trap centers/cm[sup 2] are created by a 600 [degree]C anneal.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7276883
• Journal Information: Applied Physics Letters; (United States), Vol. 65:3; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
INTERFACES
SILICON OXIDES
ACTIVATION ENERGY
ANNEALING
DISSOCIATION
HYDROGEN
PASSIVATION
POSITRON BEAMS
BEAMS
CHALCOGENIDES
ELEMENTS
ENERGY
HEAT TREATMENTS
LEPTON BEAMS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
SEMIMETALS
SILICON COMPOUNDS
360600* - Other Materials