Low-band-gap Ga[sub 0. 5]In[sub 0. 5]P grown on (511)[ital B] GaAs substrates

Journal Article · Sun May 15 00:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.355756· OSTI ID:7274156

Kurtz, S R; Olson, J M; Arent, D J; Bode, M H; Bertness, K A ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

The band gap and microstructure of Ga[sub 0.5]In[sub 0.5]P have been shown to vary with deposition conditions. However, growth on (511)[ital B] GaAs substrates has been reported to give Ga[sub 0.5]In[sub 0.5]P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga[sub 0.5]In[sub 0.5]P can be grown with low band gap and significant ordering on even the (511)[ital B] substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 [degree]C), low growth rate (0.55 [mu]m/h), and high phosphine pressure (5 Torr).

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7274156
• Journal Information: Journal of Applied Physics; (United States), Vol. 75:10; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM PHOSPHIDES
ENERGY GAP
INDIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
LAYERS
MICROSTRUCTURE
SUBSTRATES
CHEMICAL COATING
DEPOSITION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)