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CCST (Center for Compound Semiconductor Technology) research briefs

Technical Report ·
DOI:https://doi.org/10.2172/7272869· OSTI ID:7272869

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl{sub 2}Ca{sub 2}Ba{sub 2}Cu{sub 3}O{sub y} thin films.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7272869
Report Number(s):
SAND-89-2784; ON: DE90006446
Country of Publication:
United States
Language:
English