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Effects of homoepitaxial surfaces and interface compounds on the in-plane epitaxy of YBCO films on yttria-stabilized zirconia

Journal Article · · Journal of Materials Research; (United States)
 [1];  [2];  [3];  [4]
  1. Department of Applied Physics, Stanford University, Stanford, California 94305 and Xerox Palo Alto Research Center, Palo Alto, California 94304 (United States)
  2. Conductus Inc., Sunnyvale, California 94086 (United States)
  3. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  4. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
Control of the in-plane epitaxial alignment of {ital c}-axis YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) films on yttria-stabilized zirconia (YSZ) substrates is necessary for achieving optimal transport properties. We have used pulsed laser deposition to grow homoepitaxial YSZ and heteroepitaxial CeO{sub 2} on YSZ single crystal substrates. This procedure dramatically improves the epitaxy of YBCO and reduces the number of low and high angle grain boundaries. We have also studied the effects of preparing the YSZ growth surface with approximately monolayer amounts of CuO, Y{sub 2}O{sub 3}, BaO, and BaZrO{sub 3} to determine the effects these compositional variations have on the subsequent YBCO epitaxy. CuO, Y{sub 2}O{sub 3}, and BaZrO{sub 3} induce an in-plane crystallography of YBCO distinct from that initiated with BaO. Both homoepitaxy and monolayer depositions may be carried out {ital in} {ital situ} and are simple and effective for controlling the epitaxy and electrical properties of YBCO on YSZ. The effects of substrate temperature, oxygen pressure, and yttria content have also been studied.
OSTI ID:
7266785
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 7:7; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English