Liquid phase epitaxy for thin-layer silicon PV devices

Conference · Thu Jun 30 00:00:00 EDT 1994 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7258218

Wang, T H; Ciszek, T F; Tsuo, Y S; Alleman, J; Wu, X; Schwerdtfeger, C R; Burrows, R W ^[1]

---

1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We have studied liquid phase epitaxial growth of thin-layer silicon ([le]60-[mu]m thick) on substrates of cast metallurgical-grade silicon, silicon-dip-coated graphite, and single-aluminum. A solar cell made using a 60-[mu]m-thick silicon layer grown on a heavily-doped single-crystal silicon substrate has 83% of the efficiency of a control cell made using 300-[mu]m-thick float-zone silicon. In this paper, we discuss a number of issues related to thin-layer silicon growth including choice of solvents and substrates, thin-layer silicon material characteristics, and solar cell performances.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 7258218
• Report Number(s): CONF-9310273-; CODEN: APCPCS
• Journal Information: AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 306:1; Conference: 12. National Renewable Energy Laboratory (NREL) photovoltaic program review, Denver, CO (United States), Oct 1993; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
LIQUID PHASE EPITAXY
EFFICIENCY
HALL EFFECT
MICROSTRUCTURE
PHOTOCONDUCTIVITY
SOLVENTS
SUBSTRATES
TEXTURE
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion