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Temperature stability of Al/sub x/Ga/sub 1/. sqrt. /sub x/As (0less than or equal toxless than or equal to1) thermal oxide masks for selective-area epitaxy

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.341894· OSTI ID:7257010
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The use of thermal oxides of Al/sub x/Ga/sub 1/..sqrt../sub x/As (0less than or equal toxless than or equal to1) as masking materials for selective-area epitaxy by organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to600 /sup 0/C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al/sub 0.4/Ga/sub 0.6/As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 /sup 0/C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Research Organization:
Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003
OSTI ID:
7257010
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:2; ISSN JAPIA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH METHODS
CRYSTALS
DEPOSITION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
MATERIALS
MONOCRYSTALS
OXIDATION
PNICTIDES
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
STABILITY
SUBSTRATES
SURFACE COATING