Hydrogen-multivalent acceptor complexes in high-purity germanium
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7256803
Using copper (a fast diffusing, multivalent acceptor impurity in Ge) we have shown that hydrogen can form complexes with multivalent acceptors. Hydrogen is incorporated in the Ge single crystal during its growth from a melt in a H/sub 2/ atmosphere. By analogy with the interaction between lithium and multivalent acceptors we find two acceptor like complexes: Cu-H and Cu-H/sub 2/. Using Photothermal Ionization Spectroscopy and Hall effect we assign the following energy levels: Cu-H: E/sub V/ + 17.5 meV and E/sub V/ + 170 +- 20 meV and Cu-H/sub 2/: E/sub V/ + 17.0 meV. According to our model the Cu-H/sub 3/ complex is neutral. Consequences for the performance of large volume radiation detectors are discussed.
- Research Organization:
- Univ. of California, Berkeley
- OSTI ID:
- 7256803
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ADDITIVES
ALLOYS
COMPLEXES
COPPER ADDITIONS
COPPER ALLOYS
CRYOGENIC FLUIDS
CRYSTAL GROWTH
ELEMENTS
ENERGY LEVELS
FLUIDS
GE SEMICONDUCTOR DETECTORS
HIGH-PURITY GE DETECTORS
HOLES
HYDROGEN
HYDROGEN COMPLEXES
IMPURITIES
MEASURING INSTRUMENTS
NONMETALS
OXYGEN
PERFORMANCE
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SILICON
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ADDITIVES
ALLOYS
COMPLEXES
COPPER ADDITIONS
COPPER ALLOYS
CRYOGENIC FLUIDS
CRYSTAL GROWTH
ELEMENTS
ENERGY LEVELS
FLUIDS
GE SEMICONDUCTOR DETECTORS
HIGH-PURITY GE DETECTORS
HOLES
HYDROGEN
HYDROGEN COMPLEXES
IMPURITIES
MEASURING INSTRUMENTS
NONMETALS
OXYGEN
PERFORMANCE
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SILICON