Method of inducing differential etch rates in glow discharge produced amorphous silicon
Patent
·
OSTI ID:7256520
A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365 C higher than the deposition temperature prior to etching is disclosed. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon. 1 fig.
- Assignee:
- RCA Corp., New York, NY (United States)
- Patent Number(s):
- US 4217393; A
- Application Number:
- PPN: US 5-927627
- OSTI ID:
- 7256520
- Resource Relation:
- Patent File Date: 24 Jul 1978
- Country of Publication:
- United States
- Language:
- English
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