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Title: Method of inducing differential etch rates in glow discharge produced amorphous silicon

Abstract

A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

Inventors:
 [1];  [1]
  1. (Lawrenceville, NJ)
Publication Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863634
Patent Number(s):
US 4217393
Assignee:
RCA Corporation (New York, NY) OSTI
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; inducing; differential; etch; rates; glow; discharge; produced; amorphous; silicon; heating; portion; temperature; 365; degree; deposition; prior; etching; rate; exposed; unheated; amorphous silicon; glow discharge; produced amorphous; temperature prior; etch rates; discharge produced; inducing differential; differential etch; /428/136/427/438/

Citation Formats

Staebler, David L., and Zanzucchi, Peter J. Method of inducing differential etch rates in glow discharge produced amorphous silicon. United States: N. p., 1980. Web.
Staebler, David L., & Zanzucchi, Peter J. Method of inducing differential etch rates in glow discharge produced amorphous silicon. United States.
Staebler, David L., and Zanzucchi, Peter J. Tue . "Method of inducing differential etch rates in glow discharge produced amorphous silicon". United States. https://www.osti.gov/servlets/purl/863634.
@article{osti_863634,
title = {Method of inducing differential etch rates in glow discharge produced amorphous silicon},
author = {Staebler, David L. and Zanzucchi, Peter J.},
abstractNote = {A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

Patent:

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