Method of inducing differential etch rates in glow discharge produced amorphous silicon

Title: Method of inducing differential etch rates in glow discharge produced amorphous silicon

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Abstract

A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

Inventors:

Staebler, David L. ^[1]; Zanzucchi, Peter J. ^[1]

(Lawrenceville, NJ)

Publication Date:: 1980-01-01

Research Org.:: RCA Labs., Princeton, NJ (USA)

OSTI Identifier:: 863634

Patent Number(s):: US 4217393

Assignee:: RCA Corporation (New York, NY) OSTI

DOE Contract Number:: EY-76-C-03-1286

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; inducing; differential; etch; rates; glow; discharge; produced; amorphous; silicon; heating; portion; temperature; 365; degree; deposition; prior; etching; rate; exposed; unheated; amorphous silicon; glow discharge; produced amorphous; temperature prior; etch rates; discharge produced; inducing differential; differential etch; /428/136/427/438/

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                    Staebler, David L., and Zanzucchi, Peter J. Method of inducing differential etch rates in glow discharge produced amorphous silicon.  United States: N. p., 1980. 
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                    Staebler, David L., & Zanzucchi, Peter J. Method of inducing differential etch rates in glow discharge produced amorphous silicon.  United States.

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                    Staebler, David L., and Zanzucchi, Peter J. Tue .  
        "Method of inducing differential etch rates in glow discharge produced amorphous silicon".  United States.  https://www.osti.gov/servlets/purl/863634.

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@article{osti_863634,

  title        = {Method of inducing differential etch rates in glow discharge produced amorphous silicon},

  author       = {Staebler, David L. and Zanzucchi, Peter J.},

  abstractNote = {A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1980},

  month        = {1}

}

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