Microstructure of a-Si:H, a-SiGe:H, and a-SiC:H solar cell materials

Conference · Thu Jun 30 04:00:00 EDT 1994 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7256382

Williamson, D L; Chen, Y; Jones, S J ^[1]

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1. Physics Department, Colorado School of Mines, Golden, Colorado 80401 (United States)

Small-angle x-ray scattering (SAXS) is used to characterize the microstructure of hydrogenated amorphous-silicon-based semiconductors on a size scale and with a sensitivity not accessible by more standard methods such as scanning and transmission electron microscopy. Electron density fluctuations caused by microvoids or hydrogen clustering that occupy about 1 vol. % or less of a 1 [mu]m-thick film and with sizes from 1 to 30 nm can be detected. Correlations between SAXS-detected microstructure and opto-electronic properties obtained recently by our group provide strong evidence that such microstructural features influence the performance and stability of solar cells. Such correlations will be summarized together with our current understanding of the microstructures of a-Si:H, a-SiGe:H, and a-SiC:H.

• OSTI ID: 7256382
• Report Number(s): CONF-9310273--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 306:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
AMORPHOUS STATE
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HYDROGEN ADDITIONS
MATERIALS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SMALL ANGLE SCATTERING
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
SURFACE COATING
X-RAY DIFFRACTION