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Microstructure of a-Si:H, a-SiGe:H, and a-SiC:H solar cell materials

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:7256382
; ;  [1]
  1. Physics Department, Colorado School of Mines, Golden, Colorado 80401 (United States)

Small-angle x-ray scattering (SAXS) is used to characterize the microstructure of hydrogenated amorphous-silicon-based semiconductors on a size scale and with a sensitivity not accessible by more standard methods such as scanning and transmission electron microscopy. Electron density fluctuations caused by microvoids or hydrogen clustering that occupy about 1 vol. % or less of a 1 [mu]m-thick film and with sizes from 1 to 30 nm can be detected. Correlations between SAXS-detected microstructure and opto-electronic properties obtained recently by our group provide strong evidence that such microstructural features influence the performance and stability of solar cells. Such correlations will be summarized together with our current understanding of the microstructures of a-Si:H, a-SiGe:H, and a-SiC:H.

OSTI ID:
7256382
Report Number(s):
CONF-9310273--
Journal Information:
AIP Conference Proceedings (American Institute of Physics); (United States), Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Vol. 306:1; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English