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Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.98192· OSTI ID:6809812

We introduce a parameter obtained from infrared measurements as a means of quantifying the amount of amorphous silicon microstructure and its degree of passivation by hydrogen. Using this parameter, the photoconductivities of amorphous silicon (a-Si:H), amorphous silicon carbon (a-SiC:H), and amorphous silicon germanium (a-SiGe:H) fall on the same curve. We discuss the relevance of these results with regard to material quality.

Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6809812
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:6; ISSN APPLA
Country of Publication:
United States
Language:
English