Direct flow crystal growth system
Patent
·
OSTI ID:7252372
This patent describes a method of growing a crystal having increased damage threshold, in a crystal growth tank filled with crystal growing solution. It comprises maintaining the solution in the tank at substantially its saturation temperature; continuously removing solution from the tank; heating the solution removed from the tank to a predetermined temperature above the saturation temperature; filtering the heated solution through a 0.5 micron filter; cooling the filtered heated solution to substantially its saturation temperature; continuously returning the cooled filtered solution to the tank; wherein the steps of removing, filtering, cooling and returning are performed in a continuous flow system.
- Assignee:
- US Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5122224; A
- Application Number:
- PPN: US 7-428538; TRN: 92-031396
- OSTI ID:
- 7252372
- Resource Relation:
- Patent File Date: 30 Oct 1989
- Country of Publication:
- United States
- Language:
- English
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