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U.S. Department of Energy
Office of Scientific and Technical Information

Direct flow crystal growth system

Patent ·
OSTI ID:868346

A crystal is grown in a constantly filtered solution which is flowed directly into the growing face of a crystal. In a continuous flow system, solution at its saturation temperature is removed from a crystal growth tank, heated above its saturation temperature, filtered, cooled back to its saturation temperature, and returned to the tank.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5122224
OSTI ID:
868346
Country of Publication:
United States
Language:
English

References (4)

Influence of Bacteria in a Potassium Dihydrogen Phosphate Solution on the Growth Habit of Crystals journal November 1987
Growth of KH2PO4 crystals at constant temperature and supersaturation journal August 1983
Growth of large single crystals from aqueous solution: A review journal November 1987
Preface to the Second Edition book January 1980