High-quality tunnel-junction devices using high-T(c) superconductors

Patent · Fri Jun 30 04:00:00 EDT 1989

OSTI ID:7248475

Soulen, R J; Wolf, S A

This invention relates generally to superconducting devices and, specifically, to tunnel junctions and Josephson junctions in superconducting devices. A structure and method for fabricating tunnel junctions from high transition-temperature material are disclosed. A tunnel junction consists of three films successively deposited on a substrate: a superconductor, an insulator or normal metal and a superconducting or normal metal. The critical interface is between the superconductor and the insulator or normal metal. Previous attempts to form tunnel junctions have used the upper surface of the superconductor which is invariably rough and inhomogeneous. This invention uses the lower surface which is more epitaxial to fabricate tunnel junctions and Josephson junctions.

• Research Organization: Department of the Navy, Washington, DC (USA)
• Assignee: Department of the Navy, Washington, DC
• Patent Number(s): A US 7-373555
• OSTI ID: 7248475
• Country of Publication: United States
• Language: English

Related Subjects

426001* -- Engineering-- Superconducting Devices & Circuits-- (1990-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELEMENTS
FABRICATION
FILMS
INTERFACES
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
PHYSICAL PROPERTIES
SUBSTRATES
SUPERCONDUCTING DEVICES
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTORS
SURFACES
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
TUNNEL EFFECT