Transparent electrical conducting films by activated reactive evaporation

Patent · Tue Jun 22 04:00:00 EDT 1982

OSTI ID:7248431

Bunshah, Rointan; Nath, Prem

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation is disclosed. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

• Research Organization: University of California, Berkeley, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-79ET23008
• Assignee: The Regents of the University of California (Berkeley, CA)
• Patent Number(s): 4,336,277
• Application Number: 06/191,407
• OSTI ID: 7248431
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHALCOGENIDES
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC CONDUCTORS
ELECTRICAL PROPERTIES
FILMS
INDIUM COMPOUNDS
INDIUM OXIDES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL VAPOR DEPOSITION
SURFACE COATING
THIN FILMS