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U.S. Department of Energy
Office of Scientific and Technical Information

Rugged, thin GaAs solar-cell development. Phase I. Interim report, August 1984-November 1985

Technical Report ·
OSTI ID:7245289
This report describes the Phase I efforts in developing high-efficiency gallium arsenide (GaAs) on germanium (Ge) solar cells, for enhanced survivability and ruggedness over conventional devices. The GaAs/Ge cells will be optimized in Phase II (for high power to weight ratios) and extensively tested in Phase III.
Research Organization:
Applied Solar Energy Corp., City of Industry, CA (USA)
OSTI ID:
7245289
Report Number(s):
AD-A-171188/6/XAB
Country of Publication:
United States
Language:
English