Effect of deep centers on the radiative characteristics of epitaxial structures in the Ga-As-P system
Journal Article
·
· J. Appl. Spectrosc. (Engl. Transl.); (United States)
This paper studies the radiative characteristics of structures not doped with nitrogen based on AgP and GaAs /SUB 1-y/ P /SUB y/ in a wide range of compositions, containing stoichiometry and radiation defects. The structures studied were obtained by the methods of liquid-phase and gas-phase epitaxy. Zn was used as the acceptor impurity in obtaining the p-n structures. The radiation defects were introduced by irradiation with a beam of fast 2.5-MeV electrons and the radiative characteristics were studied with the help of the method of electroluminescence (EL).
- OSTI ID:
- 7240674
- Journal Information:
- J. Appl. Spectrosc. (Engl. Transl.); (United States), Vol. 44:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL DEFECTS
ELECTROLUMINESCENCE
PHYSICAL RADIATION EFFECTS
GALLIUM PHOSPHIDES
ELECTRON BEAMS
FINE STRUCTURE
LIQUID PHASE EPITAXY
P-N JUNCTIONS
RECOMBINATION
SILVER COMPOUNDS
VAPOR PHASE EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LEPTON BEAMS
LUMINESCENCE
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
360605* - Materials- Radiation Effects
360603 - Materials- Properties
GALLIUM ARSENIDES
CRYSTAL DEFECTS
ELECTROLUMINESCENCE
PHYSICAL RADIATION EFFECTS
GALLIUM PHOSPHIDES
ELECTRON BEAMS
FINE STRUCTURE
LIQUID PHASE EPITAXY
P-N JUNCTIONS
RECOMBINATION
SILVER COMPOUNDS
VAPOR PHASE EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LEPTON BEAMS
LUMINESCENCE
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
360605* - Materials- Radiation Effects
360603 - Materials- Properties