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U.S. Department of Energy
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Investigation of thin-film solar cells based on Cu/sub 2/S and certain ternary compounds. Semiannual progress report 1 Jan--30 Jun 1975

Technical Report ·
OSTI ID:7239683
The properties of thin films of chalcocite produced by sulfurization of thin films of evaporated or electroplated Cu on silica, silicon, aluminum and CdS single crystal substrates have been further investigated with the help of scanning electron microscopy in addition to cathodoluminescence and x-ray diffraction analysis. The photovoltaic parameters of heterojunction cells consisting of a sulfurized chalcocite film on CdS single crystal substrates were studied as a function of post-fabrication annealing and Cu-treatments. Such treatments improved the efficiency of such cells, even though it changed the nature of the p-type semiconductor on the CdS crystal. Cells were made by chemical substitution (dipping) on single crystals of the type Cd(x)Zn(1-x)S, CdS(x)Se(1-x) and CdS(x)Te(1-x); no significant difference was observed between these cells and those made on pure CdS crystals. CuInS/sub 2/ crystals continue to be grown and characterized. (GRA)
Research Organization:
Brown Univ., Providence, R.I. (USA). Dept. of Engineering
OSTI ID:
7239683
Report Number(s):
PB-252998; NSF/RANN/SE/GI-38102X/PR/75-2
Country of Publication:
United States
Language:
English