Investigation of thin film solar cells based on Cu/sub 2/S and certain ternary compounds. Semiannual progress report, 1 June--31 December 1974

Technical Report · Tue Jan 01 04:00:00 EST 1974

OSTI ID:5003023

Loferski, J J

Thin films of the Cu-S system have been prepared by sulfurizing thin films of copper on CdS single crystals, silica substrates and Si single crystals previously covered by a thin silicon oxide layer. In all these cases it was possible to produce films which were mainly Cu2S but an unidentified phase close in composition to Cu2S was always present in the films. Whereas the chemical dipping process produces CuXS films consisting of single crystal regions having areas in excess of micrometers, the films produced by sulfurization had a much smaller grain size. The photovoltaic output of cells made by the chemical dipping process on single crystal CdS and CdS(1-X)Te(X) where = or less than 0.01 were compared; no significant difference was observed. Cathodoluminescence spectra were recorded for Cu2S samples of various types on an improved OPTO-electronic system; it was found that the Cu2S line is narrower than had been previously reported. Copper indium sulfide films were produced by sulfurizing sputtered coin films in H2S/H2 at 400C. (NTIS)

• Research Organization: Brown Univ., Providence, R.I. (USA)
• OSTI ID: 5003023
• Report Number(s): PB-241054; NSF/RA/N-75-016
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SULFIDES
DIRECT ENERGY CONVERTERS
INDIUM COMPOUNDS
INDIUM SULFIDES
JUNCTIONS
LUMINESCENCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS