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Effect of low pressure dc plasma discharge on laser ablated ferroelectric Pb(Zr,Ti)O sub 3 thin films

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.351843· OSTI ID:7238067
;  [1]
  1. Materials Research Laboratory, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Ferroelectric thin films of PZT (Pb(Zr,Ti)O{sub 3}) were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation and were {ital in} {ital situ} crystallized, with and without an oxygen discharge. Films deposited at various oxygen discharge voltages exhibited variations in polarization switching, dielectric constant, and loss, and current-voltage ({ital I}-{ital V}) characteristics. Crystalline perovskite PZT films deposited with a discharge voltage of +300 V offered stoichiometric and crystalline films, with a dielectric constant of 850, a remnant polarization of 22 {mu}C/cm{sup 2}, and a coercive field of 40 kV/cm, a resistivity of about 10{sup 12} {Omega} cm and a charge storage density of as high as 100 fC/{mu}m{sup 2} at 5 V. Besides the property enhancement, the presence of O{sub 2}{sup +} discharge plasma appeared to have reduced the deposition temperature to relatively lower values (500 {degree}C).
OSTI ID:
7238067
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:2; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English