Surface photovoltage at Cs/GaAs(110): Photoemission experiments and theoretical modeling

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237667

Bauer, A; Prietsch, M; Molodtsov, S; Laubschat, C; Kaindl, G ^[1]

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1. Freie Univ. Berlin (Germany)

The effects of a surface photovoltage on band bending were investigated with photoemission for interfaces of thin Cs films with p-type GaAs(110) as a function of substrate dopant concentration n and temperature T. Theoretical calculations, which consider recombination by both thermionic emission and tunneling, were found to be in excellent agreement with experimental data. As a result, surface photovoltages are found to contribute only for low dopant concentrations and at low temperatures, with limits depending on the Schottky-barrier height, {Phi}{sub B}: n < 1 {times} 10{sup 18}/cm{sup 3} and T < 280K for {Phi}{sub B} = 0.7 eV, and n < 1.5 {times} 10{sup 18}/cm{sup 3} and T < 390 K for {Phi}{sub B} = 1.0 eV. At high coverages ({Theta} > 2.5 ML), the surface photovoltage is strongly reduced due to edge-leakage currents. Finally, general predictions for the occurrence and magnitude of a surface photovoltage will be given, and recent data will be critically reviewed.

• OSTI ID: 7237667
• Report Number(s): CONF-910115--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALKALI METALS
ARSENIC COMPOUNDS
ARSENIDES
CESIUM
DOPED MATERIALS
ELEMENTS
EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS
MATHEMATICAL MODELS
METALS
P-TYPE CONDUCTORS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOEMISSION
PHOTOVOLTAIC EFFECT
PNICTIDES
POTENTIALS
SCHOTTKY EFFECT
SECONDARY EMISSION
SEMICONDUCTOR MATERIALS
SURFACE POTENTIAL
THERMIONIC EMISSION