Epitaxial growth of SiC on sapphire substrates with an AlN buffer layer

Journal Article · Tue Feb 01 00:00:00 EST 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2054756· OSTI ID:7236478

Sywe, B S; Yu, Z J; Burckhard, S; Edgar, J H ^[1]; Chaudhuri, J ^[2]

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1. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
2. Wichita State Univ., KS (United States). Dept. of Mechanical Engineering

SiC is a rapidly developing semiconductor suitable for high temperature, high frequency, and high power electronics. In this work, Al coated sapphire (0001) has been developed as a new substrate for SiC thin film epitaxy. By predepositing a thin AlN buffer layer, the nucleation and adherence of the SiC film are vastly improved. X-ray diffraction and electron channeling patterns have confirmed that single-crystal 6H-SiC was obtained on AlN/Al[sub 2]O[sub 3] substrates. The undoped SiC film showed n-type electrical conductivity. The strain in the epilayer is small and the dislocation density is comparable to that in SiC grown on Si(111).

• OSTI ID: 7236478
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 141:2; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ADHESION
ALUMINIUM NITRIDES
EPITAXY
ALUMINIUM COMPOUNDS
CARBIDES
CARBON COMPOUNDS
ELECTRICAL PROPERTIES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SILICON COMPOUNDS
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies
360204 - Ceramics
Cermets
& Refractories- Physical Properties