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Resonant Raman scattering and exciton-phonon interactions in AgGaSe[sub 2]

Journal Article · · Physical Review, B: Condensed Matter; (United States)
 [1];  [2]
  1. Department of Physics, University of California, Berkeley, California 94720 (United States)
  2. Department of Physics, University of California, Berkeley, California 94720 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

Enhancements in Raman-scattering cross sections of phonon modes in AgGaSe[sub 2] have been observed both at room temperature and at liquid-nitrogen temperature. At low temperature the observed enhancements can be explained by outgoing resonances of the scattered photons at the lowest-energy free exciton. At resonance, multiphonon modes involving as many as three longitudinal-optical (LO) phonons have been observed. Exciton energy and damping constant and relative strengths of exciton--LO-phonon (Froehlich) interactions in AgGaSe[sub 2] have been determined.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
7233387
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 49:23; ISSN 0163-1829; ISSN PRBMDO
Country of Publication:
United States
Language:
English

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