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Increased transition temperature in [ital in] [ital situ] coevaporated YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] thin films by low temperature post-annealing

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112922· OSTI ID:7229254
; ; ;  [1];  [2]; ; ; ;  [3]; ; ;  [4]
  1. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States)
  2. MIT Lincoln Laboratory, Lexington, Massachusetts 02173 (United States)
  3. NIST, Boulder, Colorado 80303 (United States)
  4. AT T Bell Labs, Holmdel, New Jersey 07733 (United States)
[ital In] [ital situ] coevaporated YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] thin films have a slightly depressed transition temperature [ital T][sub [ital c]], though they have excellent radio-frequency surface resistance characteristics. These films consistently have less orthorhombic strain than laser ablated or post-annealed films. Low temperature (320--420 [degree]C) post-annealing of [ital in] [ital situ] coevaporated films in 100 kPa of O[sub 2] raised [ital T][sub [ital c]] to values as high as 91.5 K with some increase in the orthorhombic strain. All measured thin films show less variation of [ital T][sub [ital c]] with orthorhombic strain than does bulk material.
OSTI ID:
7229254
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:12; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English