Double-etch geometry for millimeter-wave photonic band-gap crystals

Journal Article · Mon Sep 26 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112929· OSTI ID:7229210

Oezbay, E; Michel, E; Tuttle, G; Biswas, R; Ho, K M ^[1]; Bostak, J; Bloom, D M ^[2]

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1. Microelectronics Research Center and Ames Laboratory, Iowa State University, Ames, Iowa 50011 (United States)
2. Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305 (United States)

We have designed and developed a new double-etch technique for fabricating three-dimensional millimeter-wave photonic band-gap crystals. This technique doubles the band-gap frequency obtainable from silicon wafers. By introducing overetching, the double-etch geometry allows one-way tuning of the midgap frequency. We have experimentally demonstrated this property by fabricating and testing structures with different overetch ratios. Terahertz spectroscopy techniques were used to measure photonic band-gap crystals with midgap frequencies ranging from 340 to 375 GHz.

• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 7229210
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:13; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY GAP
ETCHING
FABRICATION
MICROWAVE RADIATION
RADIATIONS
SEMIMETALS
SILICON
SURFACE FINISHING
TUNING