Micromachined millimeter-wave photonic band-gap crystals

Journal Article · Mon Apr 18 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111736· OSTI ID:5014650

Oezbay, E ^[1]; Michel, E; Tuttle, G ^[2]; Biswas, R ^[3]; Sigalas, M; Ho, K ^[4]

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1. Microelectronics Research Center and Ames Laboratory, Iowa State University, Ames, Iowa 50011 (United States)
2. Microelectronics Research Center and Department of Electrical Engineering and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States)
3. Microelectronics Research Center, Ames Laboratory, and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
4. Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)

We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz.

• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 5014650
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:16; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIELECTRIC MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY GAP
FABRICATION
FREQUENCY RANGE
GHZ RANGE
GHZ RANGE 01-100
GHZ RANGE 100-1000
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
SILICON
WAVE PROPAGATION