Physics of the ferroelectric nonvolatile memory field effect transistor

Journal Article · Tue Dec 15 04:00:00 EST 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.351910· OSTI ID:7226379

Miller, S L; McWhorter, P J ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge-sheet model of metal-oxide-semiconductor field-effect transistor device operation with Maxwell's first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor {ital I}-{ital V} and {ital C}-{ital V} behavior when time-dependent voltages are applied which result in hysteresis due to ferroelectric switching. The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor. These parameters include the ferroelectric spontaneous and remanent polarization, the coercive field, and dielectric layer thicknesses. We have found that the conventional concept of threshold voltage is no longer useful, and that increasing the spontaneous polarization has only a minor impact on memory operation due to reverse dipole switching of the ferroelectric layer. The application of the model to optimize design and fabrication parameters is illustrated with a virtual prototyping example. The model is also used to develop a practical testing methodology for this unique device.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7226379
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:12; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
COERCIVE FORCE
DIFFERENTIAL EQUATIONS
DIMENSIONS
EQUATIONS
FERROELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
MAXWELL EQUATIONS
MEMORY DEVICES
OPTIMIZATION
PARTIAL DIFFERENTIAL EQUATIONS
POLARIZATION
SEMICONDUCTOR DEVICES
THICKNESS
TRANSISTORS
USES