Formation of amorphous interlayers by a solid-state diffusion in Zr and Hf thin films on silicon

Journal Article · Mon Jan 29 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102764· OSTI ID:7225997

Cheng, J Y; Chen, L J ^[1]

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1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, (Republic of China)

The formation of amorphous interlayers ({ital a} interlayers) in polycrystalline Zr and Hf thin films on single-crystal (111)Si has been observed by cross-sectional transmission electron microscopy. The growth of {ital a} interlayers in group IVa metal thin films on silicon was found to exhibit similar behavior but was fundamentally different from those of metal-metal diffusion couples. The growth of {ital a} interlayers was found to follow a linear growth law initially then slowed down until a critical thickness was reached. Si was found to be the dominant diffusing species. Good correlation was found among the maximum thickness of the {ital a} interlayer, the difference in atomic size between metal and Si, the activation energy of the linear growth, and the largest heats of formation of the respective silicides.

• OSTI ID: 7225997
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:5; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ATOM TRANSPORT
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTS
FILMS
HAFNIUM
METALS
MICROSTRUCTURE
NEUTRAL-PARTICLE TRANSPORT
RADIATION TRANSPORT
SEMIMETALS
SILICON
SORPTIVE PROPERTIES
SURFACE PROPERTIES
THIN FILMS
TRANSITION ELEMENTS
ZIRCONIUM