Growth kinetics of amorphous interlayers in Ti thin films on epitaxial Si{endash}Ge layers on silicon and germanium
Journal Article
·
· Journal of Applied Physics
The growth kinetics of amorphous interlayers (a interlayers) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin films on germanium and epitaxial Si{sub 1{minus}x}Ge{sub x} (x=0.3, 0.4 and 0.7) alloys grown on (001) Si and (111) Ge has been investigated by transmission electron microscopy and Auger electron spectroscopy. The growth of a interlayers in all systems was found to follow a linear growth behavior initially. The activation energies for the linear growth of a interlayers were found to decrease with the Ge content and are 1.0{+-}0.2, 0.95{+-}0.2, 0.85{+-}0.2, and 0.7{+-}0.2eV for Ti/Si{sub 0.7}Ge{sub 0.3}, Ti/Si{sub 0.6}Ge{sub 0.4}, Ti/Si{sub 0.3}Ge{sub 0.7}, and Ti/Ge systems, respectively. The maximum thickness of a interlayer was found to increase with the Ge content with x{le}0.4. On the other hand, the formation temperature of crystalline phase was observed to decrease with the Ge content. Essential factors for the formation and growth of a interlayer are discussed. The results are compared with the Ti/Si system. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203727
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 89; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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