Minority-carrier characteristics of SiN{sub x}/GaAs metal{endash}insulator{endash}semiconductor structures with Si/Ge interlayers

Journal Article · Mon Sep 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119853· OSTI ID:664443

Park, D; Reed, J C; Morkoc, H ^[1]

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1. Fredrick Seitz Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801 (United States)

Minority-carrier response and conductance loss characteristics of SiN{sub x}/Si/Ge/n-GaAs(001) metal{endash}insulator{endash}semiconductor (MIS) structures are presented. The response time of minority carriers with Si({le}10{Angstrom})/Ge (20 {Angstrom}) interlayers, as determined by the capacitance{endash}voltage (C{endash}V) method, is several orders of magnitude smaller than those with Si interlayers only. The minority carriers in {ital n}-type Si/Ge/GaAs layers respond to even a small ac signal of 1 kHz at room temperature, which is ascribed to the smaller band gap and thus a higher intrinsic carrier concentration of Ge. The minority carriers in the SiN{sub x}/Si/Ge/n-GaAs MIS structures respond to a 1 MHz signal at a sample temperature of 230{degree}C. Temperature-dependent C{endash}V measurements on the GaAs MIS structure with Si/Ge, interlayers revealed the activation energy (E{sub a}) of the minority-carrier recombination to be about 0.58 eV. The conductance loss characteristics of SiN{sub x}/Si/Ge/GaAs structures indicate a contribution by interface traps responding to slow states, while the fast states are a result of interface defects of the SiN{sub x}/Si/GaAs MIS system. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 664443
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ENERGY GAP
GALLIUM ARSENIDES
GERMANIUM
INTERFACES
MIS TRANSISTORS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
TEMPERATURE DEPENDENCE
TRAPPING