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Structure of Cd/sub 4/GeS/sub 6/ films

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7224803
The results of a study of the systematics of thin-film formation in semiconductor compounds of the Cd/sub 4/GeS/sub 6/ type are presented. Deposition of Cd/sub 4/GeS/sub 6/ films by discrete thermal evaporation at substrate temperatures below 570 /SUP o/ K takes place by the vapor-amorphous phase mechanism but it takes place by the vapor-crystalline phase mechanism at temperatures above 580 /SUP o/ K. The formation of Cd/sub 4/GeS/sub 6/ condensates by the pulsed laser atomization employed here corresponds to a transition close to the vapor-liquid-amorphous phase-mechanism.
Research Organization:
Uzhgorod State University
OSTI ID:
7224803
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:3; ISSN INOMA
Country of Publication:
United States
Language:
English