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Electrophysical properties of the solid solutions (Cu/sub 2/GeSe/sub 3/) /SUB x/ (CdSe) /SUB 1-x/

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7224725
The authors have investigated the temperature dependence of the electrical conductivity, Hall coefficient, coefficent of thermo-emf, as well as Hall mobility of the charge carriers in Cu/sub 2/GeSe/sub 3/ and solid solutions based on it at 300-900 K. The properties were measured by the compensation method using dc current. All samples had p-type conductivity. The electrical conductivity of the alloys has a semiconductor nature in all experimental temperature ranges. The electrical conductivity of the samples investigated decreases upon increasing the CdSe concentration. From the isotherms of the electrophysical properties for solid solutions at 500 K, it can be seen that an increase in the cadmium sulfide content leads to a monotonic change in the principal electrophysical parameters of the CuGeSe/sub 3/-based solid solutions.
Research Organization:
N.S. Kurnakov Institute of General and Inorganic Chemistry, Academy of Sciences of the USSR
OSTI ID:
7224725
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:3; ISSN INOMA
Country of Publication:
United States
Language:
English