Influence of diode facet reflectivity on the dynamics of actively mode-locked semiconductor lasers

Journal Article · Fri Oct 31 23:00:00 EST 1986 · Appl. Opt.; (United States)

DOI:https://doi.org/10.1364/AO.25.003846· OSTI ID:7222086

Garside, B K; Kempf, P

The majority of models developed to describe the actively mode-locked operation of diode lasers have been generated for diodes having one antireflection coated facet. The basic starting point of such models is the assumption that the residual facet reflectivity can be ignored. In the present paper, we employ a model developed specifically to deal with mode-locked operation for diodes with a significant facet reflectivity. Experimental observation of mode-locked operation for different facet reflectivities shows that the model provides a good description of this mode of operation. It is to be emphasized that the comparison between model predictions and experimental observations is basically exact; no fitting parameters are used, and the significant diode parameters are independently measured. This model, thus validated, used to explore how low the residual facet reflectivity needs to be treated as negligible. It is shown that, even for very low values, this facet relectivity has a strong influence on the dynamical behavior of the mode-locked diode laser.

• Research Organization: McMaster University, Department of Engineering Physics, Hamilton, Ontario L8S 4M1
• OSTI ID: 7222086
• Journal Information: Appl. Opt.; (United States), Journal Name: Appl. Opt.; (United States) Vol. 25:21; ISSN APOPA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANTIREFLECTION COATINGS
COATINGS
LASER MATERIALS
LASERS
MATERIALS
MATHEMATICAL MODELS
MODE LOCKING
OPERATION
OPTICAL PROPERTIES
PERFORMANCE TESTING
PHYSICAL PROPERTIES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
TESTING
TUNING