Capacitively shunted variable-thickness microbridges

Journal Article · Thu Sep 01 00:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89700· OSTI ID:7222052

Yeh, J T.C.; Buhrman, R A

A study has been made of capacitively shunted Pb variable-thickness microbridges. The observed hysteretic I-V characteristics of these microbridges are in at least qualitative agreement with the predictions of the shunted junction model. Discrepancies between the model and experiment are attributed, in part, to the inductance of the microbridge and capacitor films. In some cases, a voltage-switching structure is also observed, which is due to geometrical resonances in the thin-film structure.

• Research Organization: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
• OSTI ID: 7222052
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRITICAL CURRENT
CURRENTS
ELECTRIC BRIDGES
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
ENERGY LOSSES
EQUIPMENT
FILMS
HYSTERESIS
IMPEDANCE
JOSEPHSON JUNCTIONS
LEAD
METALS
PHYSICAL PROPERTIES
POWER TRANSMISSION
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TEMPERATURE DEPENDENCE
TUNNEL EFFECT