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Photogalvanic cell with semiconductor anode. [Iron--thionine system; tin oxide anode]

Conference · · Am. Ceram. Soc. Bull.; (United States)
OSTI ID:7216083

A thin layer photogalvanic cell, based on the iron-thionine system, has given an efficiency of 0.03 percent for the conversion of sunlight to electricity. The functioning of the cell depends on the selectivity of the tin oxide anode, which responds preferentially to the thionine/leucothionine couple. The selective response is explained in terms of electronic energy levels of semiconductor bands and redox species. Factors which presently limit efficiency are identified and discussed.

OSTI ID:
7216083
Journal Information:
Am. Ceram. Soc. Bull.; (United States), Journal Name: Am. Ceram. Soc. Bull.; (United States) Vol. 56:4; ISSN ACSBA
Country of Publication:
United States
Language:
English