Photogalvanic effect in the thionine--iron system at semiconductor electrodes
The photogalvanic effect in thionine-Fe/sup 2 +/ aqueous systems has been studied with illuminated semiconductor electrodes. Anodic photocurrent was observed both for n- and p-type semiconductor electrodes (SnO/sub 2/, TiO/sub 2/, and p-GaP) by illuminating in the region of the absorption band of thionine. Cathodic photocurrent was also observed with cathodic polarization. Various experimental results indicate that both photocurrents are due to electron transfer between semiconductor and photoredox reaction products in solution, and not between the semiconductor and the excited dye molecules adsorbed on it. The photocurrents have been explained by considering the band structure of semiconductor and the redox levels of the photoreaction products in solution.
- Research Organization:
- Osaka Univ., Japan
- OSTI ID:
- 5200215
- Journal Information:
- J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 82:3; ISSN JPCHA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photogalvanic cell with semiconductor anode. [Iron--thionine system; tin oxide anode]
Photochemical conversion of solar energy. Annual report, January 1, 1975--December 31, 1975. [Iron--thiazine and iron--thionine]
Related Subjects
400500* -- Photochemistry
AMINES
CHEMICAL REACTIONS
CHEMISTRY
ELECTROCHEMICAL CELLS
HETEROCYCLIC COMPOUNDS
IRON COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC NITROGEN COMPOUNDS
ORGANIC SULFUR COMPOUNDS
PHOTOCHEMISTRY
PHOTOGALVANIC CELLS
REDOX REACTIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
THIONINE
TRANSITION ELEMENT COMPOUNDS