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Cross-correlation measurement of the turn-on delay and pulsewidth of a Q-switched two-section semiconductor laser

Journal Article · · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/68.262542· OSTI ID:7207312
; ;  [1];  [2]; ;  [3]
  1. Univ. of Maryland, College Park, MD (United States). Dept. of Electrical Engineering
  2. Univ. of Maryland, College Park, MD (United States). Dept. of Electrical Engineering Army Research Lab., Adelphi, MD (United States)
  3. Univ. of Maryland, College Park, MD (United States). Dept. of Electrical Engineering Lab. for Physical Sciences, College Park, MD (United States)

Cross-correlation techniques were employed for direct optical measurement of a Q-switched two-section semiconductor laser output versus electrical bias. Since the switching scheme is not limited by external connections to the device, the ultrafast dynamics of the diode laser can be investigated. In particular, a turn-on delay as small as 70 ps were recorded with picosecond accuracy. In addition, the FWHM and peak power of the Q-switched pulse were also measured. A numerical simulation was performed, and good agreement with experimental results was achieved.

OSTI ID:
7207312
Journal Information:
IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 5:12; ISSN 1041-1135; ISSN IPTLEL
Country of Publication:
United States
Language:
English