Optoelectronic measurement of picosecond turn-on delay in InGaAsP laser diodes

Journal Article · Mon Jun 26 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101040· OSTI ID:5915733

Adomaitis, E; Blixt, P; Krotkus, A

A tandem photoconductive switch, producing nearly rectangular electrical pulses with variable duration from 25 ps to 1 ns, was used for accurate turn-on delay measurements of a laser diode. Maximum electrical pulse amplitude was 75 V and both rise and fall times were 15 ps. The shortest delay recorded was 60 ps. The carrier lifetime at the lasing threshold was found to be 3.89 ns.

• Research Organization: Semiconductor Physics Institute of the Lithuanian Academy of Sciences, 232600 Vilnius, Lithuania, U.S.S.R.(SU)
• OSTI ID: 5915733
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:26; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
ELECTRICAL EQUIPMENT
ENERGY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIFETIME
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSE TECHNIQUES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SWITCHES
THRESHOLD ENERGY