Annealing of damage and stability of implanted ions in ZnO crystals
The annealing of Bi, Cr, and Mn, implanted in ZnO, has been studied by Rutherford backscattering, ion channeling, and secondary ion mass spectroscopy. Implantation of approx.10/sup 16/ ions/cm/sup 2/ of any of these elements produces large concentrations of Zn interstitials, but no completely amorphous region. The temperature at which these interstitials anneal is a function of the implant species. Other defects produced by the implantation, which give rise to dechanneling and a consequent increased scattering probability in the tails of backscattering spectra, anneal at significantly higher temperature. This annealing is also a function of the implant species. Motion of the implant ions themselves does not occur when the interstitials anneal; it takes place above 700 /sup 0/C for Bi and Mn, and above 1000 /sup 0/C for Cr.
- Research Organization:
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030
- OSTI ID:
- 7201696
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Compositional and Structural Study of Gd Implanted ZnO Films
Effect of implanted species on thermal evolution of ion-induced defects in ZnO
Related Subjects
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALLOYS
ANNEALING
BISMUTH ADDITIONS
BISMUTH ALLOYS
CHALCOGENIDES
CHANNELING
CHROMIUM ADDITIONS
CHROMIUM ALLOYS
ELASTIC SCATTERING
HEAT TREATMENTS
HIGH TEMPERATURE
ION CHANNELING
ION IMPLANTATION
MANGANESE ADDITIONS
MANGANESE ALLOYS
MASS SPECTROSCOPY
OXIDES
OXYGEN COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
SPECTROSCOPY
VERY HIGH TEMPERATURE
ZINC COMPOUNDS
ZINC OXIDES