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U.S. Department of Energy
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Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

Conference ·
OSTI ID:7201561
 [1]
  1. Thomson-CSF, Orsay (France)
The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry.
OSTI ID:
7201561
Report Number(s):
CONF-901047--; ISBN: 0-8194-0423-3
Country of Publication:
United States
Language:
English