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Silicon photodiode detector for a glancing-emergence-angle EXAFS technique

Journal Article · · Review of Scientific Instruments; (United States)
DOI:https://doi.org/10.1063/1.1142541· OSTI ID:7200190
 [1];  [2]; ;  [1];  [3]
  1. Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States)
  2. Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  3. Metallurgy Division, Brookhaven National Laboratory, Upton, New York 11973 (United States)
We have constructed a silicon photodiode detector for use with a glancing-emergence-angle (GEA) geometry useful for obtaining fluorescence EXAFS spectra from thick specimens with concentrated absorbing species. We present a description of the detector and the results of tests, including dark-noise tests, EXAFS spectra from a standard sample, and a comparison to an ion chamber also in the GEA configuration. Data obtained from the two detectors are comparable in quality, making the diode detector a preferable choice for this application due to factors such as simplicity of construction and compact size. The diodes also have potential for significant further improvement in the quality of the signal due to their high quantum efficiency if the dark noise can be reduced. We present suggestions for achieving this in future generations of the detector.
DOE Contract Number:
AS05-80ER10742; FG02-90ER45424
OSTI ID:
7200190
Journal Information:
Review of Scientific Instruments; (United States), Journal Name: Review of Scientific Instruments; (United States) Vol. 63:6; ISSN RSINA; ISSN 0034-6748
Country of Publication:
United States
Language:
English