High-power, high-brightness, phase-locked broad-stripe diode lasers

Journal Article · Mon Aug 15 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100397· OSTI ID:7199843

Lindstrom, C; Josefsson, A; Franklin, G; Milton, M; Nyberg, C

A novel superlinear graded index separate confinement laser diode structure is proposed. Single stripe diode lasers with 210 ..mu..m emitting aperture generate 3.2 W cw, and 6.3 W quasi-cw of light-output power in a phase-locked operation. The catastrophic optical density (30 W/mm) obtained for these lasers is better than that reported for devices with nonabsorbing mirrors.

• Research Organization: Geotronics AB, Box 64, 182 11 Danderyd, Sweden
• OSTI ID: 7199843
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DESIGN
DIMENSIONS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THICKNESS