Molecular beam studies of a gas-surface reaction: Dynamics of laser-induced chemical etching of Si(111) by chlorine
- Fudan Univ., Shanghai (China)
Laser-induced chemical etching of Si(111) surface with molecular chlorine is investigated by use of a CW supersonic molecular beam under 355- and 560-nm pulsed laser irradiation. Two major desorbed reaction products, SiCl and SiCl{sub 2}, are observed by time-resolved mass spectrometry. The time-of-flight (TOF) spectra of the desorbed species are measured as a function of laser fluence and the translational energy of the incident chlorine molecules. The measured TOF spectra can be fitted to a Maxwell-Boltzmann distribution at laser fluences lower than 120 mJ/cm{sup 2}. The enhancement of the laser-induced gas-surface reaction on raising the normal component of the translational energy of the chlorine molecules is obvious for both laser wavelength cases. A reaction mechanism that mainly involves the dissociative chemisorption of Cl{sub 2}, the reaction of the adsorbed species, and the laser-induced desorption on the surface is proposed.
- OSTI ID:
- 7197565
- Journal Information:
- Journal of Physical Chemistry; (USA), Vol. 93:14; ISSN 0022-3654
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silicon structuring by etching with liquid chlorine and fluorine precursors using femtosecond laser pulses
Angle-resolved supersonic molecular beam study of the Cl sub 2 /GaAs l brace 110 r brace thermal etching reaction
Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILICON
ETCHING
CHLORINE
DATA ANALYSIS
EXPERIMENTAL DATA
LASERS
MEASURING INSTRUMENTS
MEASURING METHODS
MOLECULAR BEAMS
SEMICONDUCTOR MATERIALS
BEAMS
DATA
ELEMENTS
HALOGENS
INFORMATION
MATERIALS
NONMETALS
NUMERICAL DATA
SEMIMETALS
SURFACE FINISHING
360603* - Materials- Properties
400400 - Electrochemistry
400201 - Chemical & Physicochemical Properties