Molecular beam study of laser-induced chemical etching of Si(111) by chlorine molecules

Journal Article · Mon Nov 14 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100334· OSTI ID:6732552

Li, Y; Zhang, Z; Zheng, Q; Jin, Z; Wu, Z; Qin, Q

Chemical etching of Si(111) surface by chlorine molecules under 355 and 560 nm irradiation has been studied using a continuous wave supersonic molecular beam. Only two products, SiCl and SiCl/sub 2/, were observed. The translational energy distributions of the gaseous products have been measured as a function of laser fluence, and can be fitted with Maxwell--Boltzmann distributions. Study on the effect of translational energy of incident chlorine molecules on the reaction rate is also presented for the first time.

• Research Organization: Laser Chemistry Laboratory, Fudan University, Shanghai, People's Republic of China
• OSTI ID: 6732552
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL REACTION YIELD
CHLORIDES
CHLORINE
CHLORINE COMPOUNDS
COLLISIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ETCHING
HALIDES
HALOGEN COMPOUNDS
HALOGENS
LASER RADIATION
MOLECULE COLLISIONS
NONMETALS
RADIATIONS
SEMIMETALS
SILICON
SILICON CHLORIDES
SILICON COMPOUNDS
SURFACE FINISHING
YIELDS