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Spectrometer performance of n-type cadmium telluride x- and. gamma. -ray detectors

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7197000
Highly perfect n-type CdTe single crystals grown by the sealed-ingot-zone refining method have been used to fabricate semiconductor surface-barrier detectors for X- and low-energy ..gamma..-ray analysis. An energy resolution of 2.0 keV (fwhm) and 1.5 keV (fwhm) was achieved for 59.5 keV ..gamma..-rays from /sup 241/Am and 5.9 keV characteristic K X-ray line from /sup 55/Fe source, respectively. Spectra were measured at room temperature with low detector bias. The observed full energy peak of 59.5 keV ..gamma..-rays has been compared with the theoretical peak calculated for a surface-barrier junction with fixed space charge, the trapping effects being taken into account. (auth)
NSA Number:
NSA-33-29361
OSTI ID:
7197000
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:1
Country of Publication:
United States
Language:
English