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Spectrometer performance of n-type cadmium telluride x- and $gamma$-ray detectors

Conference · · IEEE Trans. Nucl. Sci., v. NS-23, no. 1, pp. 171-176
OSTI ID:4043991
Highly perfect n-type CdTe single crystals grown by the sealed-ingot- zone refining method have been used to fabricate semiconductor surface-barrier detectors for X- and low-energy $gamma$-ray analysis. An energy resolution of 2.0 keV (fwhm) and 1.5 keV (fwhm) was achieved for 59.5 keV $gamma$-rays from $sup 241$Am and 5.9 keV characteristic K X-ray line from $sup 55$Fe source, respectively. Spectra were measured at room temperature with low detector bias. The observed full energy peak of 59.5 keV $gamma$-rays has been compared with the theoretical peak calculated for a surface-barrier junction with fixed space charge, the trapping effects being taken into account. (auth)
Research Organization:
Inst. of Nuclear Research, Swierk, Poland
NSA Number:
NSA-33-029361
OSTI ID:
4043991
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci., v. NS-23, no. 1, pp. 171-176
Country of Publication:
United States
Language:
English