Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Deposition and properties of yttria-stabilized Bi[sub 2]O[sub 3] thin films using reactive direct current magnetron cosputtering

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2221265· OSTI ID:7187631
;  [1]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
In this paper, yttria-stabilized Bi[sub 2]O[sub 3] (YSB) thin films are deposited using reactive direct current (d.c.) magnetron cosputtering from Y and Bi targets. The films were deposited in argon/oxygen sputtering gas mixtures onto silica glass, NaCl, and MgO substrates. (Y[sub 2]O[sub 3])[sub x](Bi[sub 2]O[sub 3])[sub 1 [minus] x] thin films with x = 0.25-0.5 were obtained under metallic mode sputtering conditions, but were found to be [approx]10% oxygen deficient. Post-deposition annealing in air at T[approx gt] 500[degrees]C led to fully stoichiometric films. X-ray diffraction and transmission electron microscope (TEM) studies showed that the structure of the annealed films was cubic with lattice parameters following Vegar's law. The films were dense as judged by scanning electron microscope (SEM) and TEM. Complex impedance spectroscopy measurements were carried out in air on x = 0.25 films with Ag-(La[sub 0.7]Sr[sub 0.3])CoO[sub 3] cermet electrodes. The temperature dependent ionic conductivity exhibited a knee point at T[sub d] [approx]870[degrees]K, with activation energies of 1.2 eV below T[sub d] and 0.96 eV above T[sub d], in good agreement with values for bulk YSB with the same composition. The interfacial resistance of the cermet with 30 volume percent (v/o) AG on a YSB electrolyte thin film [approx]0.3 [Omega] cm[sup 2] at 750[degrees]C.
OSTI ID:
7187631
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 139:9; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English

Similar Records

Lowering the air-electrode interfacial resistance in medium-temperature solid oxide fuel cells
Journal Article · Thu Oct 01 00:00:00 EDT 1992 · Journal of the Electrochemical Society; (United States) · OSTI ID:6732088

Deposition, structure, and properties of cermet thin films composed of Ag and Y-stabilized zirconia
Journal Article · Tue Mar 31 23:00:00 EST 1992 · Journal of the Electrochemical Society; (United States) · OSTI ID:5055780

In situ growth of YBa sub 2 Cu sub 3 O sub x thin films by reactive cosputtering
Journal Article · Tue Dec 31 23:00:00 EST 1991 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) · OSTI ID:5427736